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  • Tiempo is demonstrating at the “Cartes 2009” event how its asynchronous design technology can dramatically improve processing speed for contactless applications with, as an illustration, a live demo of a secured PayPass™ transaction in which processing speed on the card is six times faster than industry implementations, showing a complete transaction in less than 60 ms.
  • Download full press release here
Tiempo listed in the EE Times 60 Emerging Silicon Startups
  • Tiempo joins the "EE Times 60 Emerging Silicon Startups" list for the latest update to version 9.0.
  • View article on EETimes here
TAM16 wins "Electron d'or 2009" award
  • TAM16, Tiempo asynchronous 16-bit microcontroller, wins the prestigious "Electron d'or" award by Electronique Magazine in the IP category.
  • Click here for the article (in French).
Ultra-low power 16-bit microcontroller core consumes less than 40 µA per MIPS
  • Tiempo announces its new chip, fully operational at first run, that silicon-proves its 16-bit microcontroller core IP – TAM16 – on a CMOS 130 nm general-purpose process. The chip logic has been entirely designed in Tiempo’s innovative asynchronous and delay insensitive technology
  • Full press release (PDF format)
  • Aix en Provence, France, Oct 9th, 2008 : INSIDE Contactless, world leader in advanced contactless microprocessor platforms, and TIEMPO have announced a partnership for the design of a next generation chip product that incorporates asynchronous design technology.
  • Full press release (PDF format)
DES 4  : new fully-asynchronous low-power and secured crypto-processor chip
  • Press release (PDF format)
  • Four DES cores, fully asynchronous & delay-insensitive, with different levels of security
  • Each core is available as IP and executes standard ciphering algorithms DES, DES-1, 3DES and 3DES-1
  • Electrical characteristics (CMOS 130 nm technology):
    • Supply voltage range: 0.6 V to 1.2 V
    • Max. current peaks: 250 µA to 800 µA
    • Power consumption: 200 µA to 1 mA
    • DES execution time: 2,3 µs to 250 ns